2008. 8. 29 1/3 semiconductor technical data bc856w/7w/8w epitaxial planar pnp transistor revision no : 4 general purpose application. switching application . features ? for complementary with npn type bc846w/847w/848w. maximum rating (ta=25 ? ) dim millimeters a b d e 1. emitter 2. base 3. collector usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 0.10 n 0.10 min + _ + _ + _ + _ + _ characteristic symbol rating unit collector-base voltage bc856w v cbo -80 v bc857w -50 bc858w -30 collector-emitter voltage bc856w v ceo -65 v bc857w -45 bc858w -30 emitter-base voltage bc856w v ebo -5 v bc857w -5 bc858w -5 collector current i c -100 ma emitter current i e 100 ma collector power dissipation p c 100 mw junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? mark spec type name marking lot no. type bc856w-a bc856w-b bc857w-a bc857w-b bc857w-c bc858w-a bc858w-b BC858W-C mark 3a 3b 3e 3f 3g 3j 3k 3l
2008. 8. 29 2/3 bc856w/7w/8w revision no : 4 electrical characteristics (ta=25 ? ) note : according to the value of h fe the bc856, bc857, bc858 are classified as follows. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-30v, i e =0 - - -15 na dc current gain (note) bc856w h fe v ce =-5v, i c =-2ma 125 - 475 bc857w 125 - 800 bc858w 125 - 800 collector-emitter saturation voltage v ce(sat) 1 i c =-10ma, i b =-0.5ma - -0.09 -0.3 v v ce(sat) 2 i c =-100ma, i b =-5ma - -0.25 -0.65 base-emitter saturation voltage v be(sat) 1 i c =-10ma, i b =-0.5ma - -0.7 - v v be(sat) 2 i c =-100ma, i b =-5ma - -0.9 - base-emitter voltage v be(on1) v ce =-5v, i c =-2ma -0.6 -0.65 -0.75 v base-emitter voltage v be(on2) v ce =-5v, i c =-10ma - - -0.82 v transition frequency f t v ce =-5v, i c =-10ma, f=100mhz - 150 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4.5 - pf noise figure nf v ce =-6v, i c =-0.2ma r g =2k ? , f=1khz - 2.0 10 db classification a b c h fe bc856w 125 ?- 250 220 ?- 475 - bc857w 125 ?- 250 220 ?- 475 420 ?- 800 bc858w 125 ?- 250 220 ?- 475 420 ?- 800
2008. 8. 29 3/3 bc856w/7w/8w revision no : 4 c collector current i (ma) 0 collector current i (ma) c -0.1 -0.2 base-emitter voltage v (v) be 0 collector-emitter voltage v (v) ce ce c i - v i - v collector-base voltage v (v) capacitance c (pf) ob 10 1 -1 -3 20 cb -10 -30 c - v collector current i (ma) dc current gain h -0.1 -0.3 fe -1 -3 c h - i -4 -8 -12 -16 -20 -10 -20 -30 -40 -50 i =-400 a b i =-350 a b i =-50 a b i =-100 a b i =-150 a b i =-200 a b i =-250 a b i =-300 a b cbe -0.4 -0.6 -0.8 -1.0 -0.3 -0.5 -1 -3 -5 -10 -30 -50 -100 v =-5v ce fe c -10 -30 -100 10 30 50 100 300 500 1k saturation voltage -1 collector current i (ma) -0.1 -0.01 -0.03 -0.1 -0.3 -30 -3 -10 c -100 be(sat) -0.3 -1 v , v - i be(sat) c ce(sat) v , v (v) ce(sat) -3 -10 i /i =20 c b v be(sat) v ce(sat) ob cb -100 -200 3 5 f=1mhz i =0 e v =-5v ce
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